6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 3rd - 7th, 2006

ECSCRM 2006

Newcastle upon Tyne, UK

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ECSCRM 2006 Invited Presentations (Complete)

Plenary Lectures:

Peter Friedrichs		SiCED, Germany		SiC power devices: present and future.
Nick Wright		University of Newcastle, United Kingdom		SiC Electronics – an historical overview.

Invited Oral Presentations:

John Steeds		University of Bristol, United Kingdom		Photoluminescence investigation of defects created by electron bombardment of 4H-SiC.
Gerhard Pensl		University of Erlangen-Nurnberg, Germany		(Nitrogen/vacancy)-complex formation in SiC: experiment and theory.

Michael Uren		QinetiQ, United Kingdom		Advances in GaN/SiC electronic devices.
Cem Basceri		Cree Dulles, USA		Status of commercial scale 3-inch and 100mm diameter micropipe-free SiC substrate production.
Anant Agarwal		Cree, Inc., USA		A case for high temperature SiC bipolar devices.
Tsunenobu Kimoto		Kyoto University, Japan		Growth and electrical characterization of SiC epi-layers.
Roberta Nipoti		CNR-IMM, Italy		Relevance of the heating rate during the post implantation annealing of 4H-SiC.
Adam Gali		Budapest University of Technology and Economics, Hungary		Point defects and their aggregates in silicon carbide.
Anne Henry		Linköping University, Sweden		Growth of thick epitaxial layers for power devices.
Einar Sveinbjörnsson		Chalmers University, Sweden		The SiO₂/4H-SiC interface.
Brett Hull		Cree, Inc., USA		Progress on the Development of 10 kV 4H-SiC PiN Diodes for High Current/High Voltage Power Handling Applications.
Gerald Soelkner		Infineon Technologies, Germany		Reliability of SiC power devices against cosmic radiation-induced failure.
Leon Tolbert		The University of Tennessee, USA		SiC-based Power Converters for High Temperature Applications.
Thomas Straubinger		SiCrystal AG, Germany		Quality Aspects for the Production of SiC Bulk Crystals.
Invited Poster Presentations:
Poster session 1
Gabriel Ferro		LMI - University Lyon 1, France		Growth of SiC from a liquid phase at low temperature.
Alton Horsfall		University of Newcastle, United Kingdom		Trap Assisted Gas Sensing Mechanism in SiC Capacitors.
Alexander Lebedev		Ioffe Institute, Russia		SiC heteropolytype structures grown by sublimation epitaxy.
Poster session 2
Toshiharu Ohnuma		CRIEPI, Japan		Dynamical simulation of SiO₂/4H-SiC(0001) interface oxidation process: from first-principles.
Patrick Soukiassian		Commissariat à l'Energie Atomique, France		Atomic Cracks Defects Developing at Silicon Carbide Surfaces.
Kevin Kirchner		Army Research Lab, USA		Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps.
Poster session 3
Thomas Frank		University of Erlangen-Nuernberg, Germany		Control of the flatband voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum.
Carey Tanner		UCLA, USA		Experimental and First-Principles Studies of the Band Alignment at High-k Oxide / SiC Interfaces.
Wolfgang Bartsch		SiCED Electronics Development GmbH & Co. KG, Germany		Bipolar SiC-diodes - Challenges arising from Physical and Technological Aspects.